Samsung’s Fifth Generation V-NAND Flash Memory, Starting in Mass Production

Korean electronics company Samsung announced that it began producing the fifth generation V-NAND memory chip. Reported by GSM Arena, (July 10, 2018), the main feature of this new product is the adoption of NAND “Toggle DDR 4.0” interface.

The fifth-generation V-NAND enables the transfer between storage and RAM 40 per cent faster than its predecessor peaked at 1.4Gbps. However, along with better performance, this new memory provides better power efficiency as well, about 1.8 volts to 1.2 volts.

The new generation V-NAND chip is made similar to the previous one. But, he did not combine 64 layers. The new V-NAND is equipped with 90 layers of flash charge trap cells (CTF). They are stacked in a pyramid-like structure with microscopic holes in the middle. These holes function as channels and are only a few hundred nanometers wide with more than 85 billion CTF cells each storing up to three bits of data.

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In write speed, the fifth-generation V-NAND can reach speeds of 500 microseconds (μs), about 30 per cent faster than its predecessor. The response time to read the signal also drops to 50μs. In addition, it also has a new high-performance 256 gigabyte (GB) Chip.

As we quote from Hexus, (July 10, 2018), in a statement sent with this 5th generation V-NAND announcement, Samsung’s EVP Flash Product and Technology, Kye Hyun Kyung, said, “In addition to the cutting-edge advances we are announcing today, we are preparing to introduce 1 terabyte (Tb) capacity and quad-level cell (QLC) offerings into our V-NAND range, which will continue to drive momentum for next-generation NAND memory solutions across global markets. “

He also expects the chip to be used in a variety of sectors, such as supercomputers, enterprise servers, and premium smartphones in the coming months.

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